Publications and Dissemination

Members of the NanoEmbrace consortium have published papers in a wide variety of journals and presented at many conferences, exhibitions and seminars

Journal of Physics D: Applied Physics

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Special Issue on Nanostructures for Photonics.  

To be published 2017

Guest Editors

Vladimir DubrovskiiIoffe Physical-Technical Institute, RAS

Frank GlasCentre for Nanosciences and Nanotechnology

Dagou ZezeDurham University

 

 

  Peer-reviewed Journal papers with direct ESRs contribution.*

(*The names of the NanoEmbrace participants appear in bold, those of the NanoEmbrace supervisors in bold italic.)

 [1]       G. Priante, J.-C. Harmand, G. Patriarche, F. Glas. Random stacking sequences in III-V nanowires are correlated. Phys. Rev. B 89, 241301 (2014) (Rapid Communication). DOI:http://dx.doi.org/10.1103/PhysRevB.89.241301

[2]       E. Gil, V. G. Dubrovskii, G. Avit, Y. André, C. Leroux,  K.R. Lekhal, J. Grecenkov, A. Trassoudaine, D. Castelluci, G. Monier, R. M. Ramdani, C. Robert-Goumet, L. Bideux, J. C. Harmand, F. Glas; Record pure zincblende phase in GaAs nanowires down to 5 nm in radius; Nano Lett. 14, 3938 (2014). DOI: 10.1021/nl501239h

[3]       V. G. Dubrovskii and Jurij Grecenkov. Recipes for crystal phase design in Au-catalyzed III-V nanowires. J. Phys.: Conference Series 541, 012001 (2014). http://dx.doi.org/10.1088/1742-6596/541/1/012001

[4]       Yury Berdnikov, Vladimir G. Dubrovskii. Size distributions and scaling relations for heterogeneous nucleation and growth of atomic chains. J. Phys.: Conference Series 541, 012089 (2014). http://dx.doi.org/10.1088/1742-6596/541/1/012089

[5]       G. Priante, G. Patriarche, F. Oehler, F. Glas, J.-C. Harmand. Abrupt GaP/GaAs interfaces in self-catalyzed nanowires. Nano Lett. 15, 6036 (2015). doi: 10.1021/acs.nanolett.5b02224

[6]       V. G. Dubrovskii, T. Xu, A. Díaz Álvarez, S. Plissard, P. Caroff, F. Glas, B. Grandidier. Self-equilibration of the diameter of Ga-catalyzed GaAs nanowires. Nano Lett. 15, 5580 (2015). DOI: 10.1021/acs.nanolett.5b02226

[7]       G. Priante, F. Glas, G. Patriarche, K. Pantzas, F. Oehler, J.-C. Harmand. Sharpening the interfaces of axial heterostructures in self-catalyzed AlGaAs nanowires: experiment and theory. Nano Lett. 16, 1917 (2016) DOI: 10.1021/acs.nanolett.5b05121

[8]       Yury Berdnikov, Vladimir G. Dubrovskii.  Size distributions and scaling relations for heterogeneous nucleation and growth of atomic chains. IOP Conf. Series, accepted (2014). JOURNAL OF PHYSICS CONFERENCE SERIES 541(1):012089 · OCTOBER 2014 DOI: 10.1088/1742-6596/541/1/012089

[9]       V.G. Dubrovskii and J. Grecenkov. Zeldovich nucleation rate, self-consistency renormalization, and crystal phase of Au-catalyzed GaAs nanowires. Cryst. Growth Des., 2015, 15 (1), p. 340–347.  DOI: 10.1021/cg5014208

[10]   V.G. Dubrovskii, Yu.S. Berdnikov. Size distributions and scaling in heterogeneous nucleation with size-linear rate constants. Mater. Phys. Mech. 2014, v. 21, № 3, p. 207-221.

[11]   V.G. Dubrovskii and Yu.S. Berdnikov. Natural scaling of size distributions in homogeneous and heterogeneous rate equations with size-linear capture rates. J. Chem. Phys., 2015, v. 142, Art. № 124110. DOI: 10.1063/1.4916323

[12]   V.G. Dubrovskii, Yu.S. Berdnikov, Zh.V. Sokolova. Scaling size distribution functions of heterogeneous clusters in a linear capture coefficient model. Technical Physics Letters 41(3):242-245 · March 2015. DOI: 10.1134/S1063785015030049

[13]   A. Díaz Álvarez, T. Xu, G. Tütüncüoglu, T. Demonchaux, J.-P. Nys, M. Berthe, F. Matteini, H. A. Potts, D. Troadec, G. Patriarche, J.-F. Lampin, C. Coinon, A. Fontcuberta i Morral, R. E. Dunin-Borkowski, P. Ebert, B. Grandidier. Nonstoichiometric Low-Temperature Grown GaAs Nanowires, Nano Lett. 15, 6440 (2015). doi: 10.1021/acs.nanolett.5b01802

[14] T. Xu, M. J. Wei, P. Capiod, A. Díaz Álvarez, X. L. Han, D. Troadec, J. P. Nys, M. Berthe, I. Lefebvre, G. Patriarche, S. R. Plissard, P. Caroff, Ph. Ebert, B. Grandidier. Type I band alignment in GaAs81Sb19/GaAs core-shell nanowires, Appl. Phys. Lett. 107, 112102 (2015). doi: 10.1063/1.4930991

[15]   M. Tchernycheva, V. Neplokh, H. Zhang, P. Lavenus, L. Rigutti, F. Bayle, F. H. Julien, A. Babichev, G. Jacopin, L. Largeau, R. Ciechonski, G. Vescovi, O. Kryliouk. Core-shell InGaN/GaN nanowire light emitting diodes analyzed by electron beam induced current microscopy and cathodoluminescence mapping., Nanoscale 7, 11692 – 11701 (2015). DOI: 10.1039/C5NR00623F

[16]   E. Russo-Averchi, J. Vukajlovic Plestina, G. Tütüncüoglu, F. Matteini, A. Dalmau Mallorqui, M. de la Mata, D. Rüffer, J. Arbiol, S. Conesa-Boj, A. Fontcuberta i Morral. High yield GaAs nanowire arrays on Si mediated by the pinning and contact angle of Ga. Nano Lett. 15, 2869 (2015) DOI: 10.1021/nl504437v.

[17]   Hezhi Zhang, Gwénolé Jacopin, Vladimir Neplokh, Ludovic Largeau, François H Julien, Olga Kryliouk and Maria Tchernycheva. Color control of nanowire InGaN/GaN light emitting diodes by post-growth treatment. Nanotechnology, Volume 26, Number 46. http://dx.doi.org/10.1088/0957-4484/26/46/465203.

[18]   A. Messanvi, H. Zhang, V. Neplokh, F. H. Julien, F. Bayle, M. Foldyna, C. Bougerol, E. Gautier, A. Babichev, C. Durand, J. Eymery, and M. Tchernycheva. Investigation of Photovoltaic Properties of Single Core–Shell GaN/InGaN Wires. Appl. Mater. Interfaces, 2015, 7 (39), pp 21898–21906. DOI: 10.1021/acsami.5b06473.

[19]   Aliénor Svietlana Togonal, Martin Foldyna, Wanghua Chen, Jian Xiong Wang, Vladimir Neplokh, Maria Tchernycheva, Joaquim Nassar, Pere Roca i Cabarrocas, and Rusli. Core–Shell Heterojunction Solar Cells Based on Disordered Silicon Nanowire Arrays. J. Phys. Chem. C, 2016, 120 (5), pp 2962–2972. DOI: 10.1021/acs.jpcc.5b09618.

[20]   Vladimir Neplokh , Agnes Messanvi, Hezhi Zhang, Francois H. Julien, Andrey Babichev, Joel Eymery, Christophe Durand, Maria Tchernycheva. Substrate-Free InGaN/GaN Nanowire Light-Emitting Diodes.  Nanoscale Research Letters 10:447. DOI 10.1186/s11671-015-1143-5

[21]   Dogmus, E., Zegaoui, M., Largeau, L., Tchernycheva, M., Neplokh, V., Weiszer, S., Schuster, F., Stutzmann, M., Foldyna, M. and Medjdoub, F. (2015), High structural quality InGaN/GaN multiple quantum well solar cells. Phys. Status Solidi C, 12: 1412–1415. doi: 10.1002/pssc.201510137

[22]  D. Volpati, M. K. Massey, D. W. Johnson, A. Kotsialos, F. Qaiser, C. Pearson, K. S. Coleman, G. Tiburzi, D. A. Zeze, and M. C. Petty; Exploring the alignment of carbon nanotubes dispersed in a liquid crystal matrix using coplanar electrodes; Journal of Applied Physics 117, 125303 (2015); doi: 10.1063/1.4916080.

[23] L. Tian, L. di Mario, V. Zannier, D. Catone, S. Colonna, P. O’Keeffe, S. Turchini, N. Zema, S. Rubini, F.MartelliUltrafast carrier dynamics, band-gap renormalization, and optical properties of ZnSe nanowiresPhysical Review B 94, 165442 (2016). doi: 10.1103/PhysRevB.94.165442

[24] L. di Mario, S.Turchini, G.Zamborlini, V.Feyer, L.Tian, C.M. Schneider, S.Rubini, F.Martelli;  Schottky Barrier Measurements on Individual GaAs Nanowires by X-ray Photoemission Microscopy. Applied Surface Science  386, 72 (2016). doi: 10.1016/j.apsusc.2016.06.002
 
[25] L. Tian, L. Di Mario, A Minotti, G. Tiburzi, B.G. Mendis, D.A. Zeze, F. Martelli;  Direct growth of Si nanowires on flexible organic substrates. Nanotechnology 27, 225601 (2016). doi: http://dx.doi.org/10.1088/0957-4484/27/22/225601
 

[26] J. Vukajlovic Plestina, V. G. Dubrovskii, G. Tütüncüoǧlu, H. A. Potts, R. Ricca, F. Meyer, F. Matteini, J.-B Leran, A. Fontcuberta i Morral. Molecular beam epitaxy of InAs nanowires in SiO2 nanotube templates: challenges and prospects for integration of III–Vs on Si. Nanotechnology 27, 455601 (2016). doi: 10.1088/0957-4484/27/45/455601 

[27] V. G. Dubrovskii, N. V. Sibirev, Y. Berdnikov, U. P. Gomes, D. Ercolani, V. Zannier, and L. Sorba. Length distributions of Au-catalyzed and In-catalyzed InAs nanowires. Nanotechnology 2016, v. 27, n. 37. Art. № 375602. doi: 10.1088/0957-4484/27/37/375602 

[28] V. G. Dubrovskii, Y. Berdnikov, and N. V. Sibirev. Regimes of radial growth for Ga-catalyzed GaAs nanowires. Appl. Phys. A, 2016, v. 122, p. 671-677. doi:10.1007/s00339-016-0179-4

[29] Jurij Grecenkov, Vladimir G. Dubrovskii, Masoomeh Ghasemi, and Jonas Johansson. Quaternary chemical potentials for gold-catalyzed growth of ternary InGaAs nanowires. Cryst. Growth Des., 2016, v. 16 (8), p. 4526–4530. doi:10.1021/acs.cgd.6b00645

[30] J. Grecenkov, V. G. Dubrovskii. Chemical potentials and growth rates of gold-catalyzed ternary InGaAs nanowires. J. Phys.: Conf. Ser., 2016, v. 741, Art. № 012010. doi:10.1088/1742-6596/741/1/012010.

[31] Y. Berdnikov, N. V. Sibirev and V. G. Dubrovskii. Contribution of droplet volume fluctuation to the dispersion of nanowire length. J. Phys.: Conf. Ser., 2016, v. 741, Art. № 012040. doi:10.1088/1742-6596/741/1/012040.

[32]  V. G. Dubrovskii, Y. Berdnikov, J. Schmidtbauer, M. Borg, K. Storm, K. Deppert, and J. Johansson, Length Distributions of Nanowires Growing by Surface Diffusion, Cryst. Growth Des. 16 (2016) 2167-2172. doi: 10.1021/acs.cgd.5b01832

[33] A. Diaz Álvarez, T. Zhu, J.P. Nys, M. Berthe, M. Empis, J. Schreiber, B. Grandidier, T. Xu. Scanning tunnelling spectroscopy and Raman spectroscopy of monolayer silicene on Ag(111), Surf. Sci. 653, 92 (2016). doi: 10.1016/j.susc.2016.06.005

[34] Chandramohan, A., Sibirev, N., Dubrovskii, V., Petty, M., Gallant, A., and Zeze, D. Model for large-area monolayer coverage of polystyrene nanospheres by spin coating, Nature Scientific Reports, 2016. (Accepted December 2016). doi: 10.1038/srep40888

[35] Papageorgiou, G., J.D. Major, and K. Durose, Substrate geometry CdTe solar cells with catalytically-grown nano-rough surfaces. MRS Advances, 2016. 1(14). DOI: 10.1557/adv.2016.153

[36] Dogmus, E., M. Zegaoui, L. Largeau, M. Tchernycheva, V. Neplokh, S. Weiszer, F. Schuster, M. Stutzmann, M. Foldyna, and F. Medjdoub, High structural quality InGaN/GaN multiple quantum well solar cells, in Physica Status Solidi C: Current Topics in Solid State Physics, Vol 12, No 12, P. Mascher, et al., Editors. 2015, Wiley-V C H Verlag Gmbh: Weinheim. p. 1412-1415. doi: 10.1002/pssc.201510137 

[37] Vladimir Neplokh, Ahmed Ali, François H Julien, Martin Foldyna, Ivan Mukhin, George Cirlin, Jean-Christophe Harmand, Noëlle Gogneau, Maria Tchernycheva.  Electron beam induced current microscopy investigation of GaN nanowire arrays grown on Si substrates. Materials Science in Semiconductor Processing  (2016), pp. 72-78, DOI information: 10.1016/j.mssp.2016.03.002

 
 

Other Journal Papers by Consortium members*

[1]   V. G. Dubrovskii. Self-regulated pulsed nucleation in catalyzed nanowire growth. Phys. Rev. B. 87, 195426 (2013). DOI: 10.1103/PhysRevB.87.195426

[2]   F. Glas, M. R. Ramdani, G. Patriarche, J.-C. Harmand. Predictive modeling of self-catalyzed III-V nanowire growth. Phys. Rev. B 88, 195304 (2013). DOI:10.1103/PhysRevB.88.195304

[3]   P. Krogstrup, H. I. Jørgensen, E. Johnson, M. H. Madsen, C. B. Sørensen, A. Fontcuberta i Morral, M. Aagesen, J. Nygård, F. Glas. Advances in the theory of III–V nanowire growth dynamics. J. Phys. D: Appl. Phys. 46, 313001 (2013). DOI: 10.1088/0022-3727/46/31/313001

[4]   P. Capiod, T. Xu, J. P. Nys, M. Berthe, G. Patriarche, L. Lymperakis, P. Caroff, P. Ebert, B. Grandidier. Band offsets at zincblende-wurtzite GaAs nanowire sidewall surfaces. Appl. Phys. Lett. 103, 122104 (2013). doi: 10.1063/1.4821293

[5]   A. D. Bolshakov, V. G. Dubrovskii, X. Yan, X. Zhang, X. Ren. Modeling InAs Quantum Dot Formation on the Side Surface of GaAs Nanowires. Tech. Phys. Lett. 39, 1047 (2013). doi: 10.1134/S1063785013120043 

[6]   F. Glas. Statistics of sub-Poissonian nucleation in a nanophase. Phys. Rev. B 90, 125406 (2014). Editor's choice. doi: 10.1103/PhysRevB.90.125406

[7]   Priyanka Periwal, Nickolay V. Sibirev, Gilles Patriarche, Bassem Salem, Franck Bassani, Vladimir G. Dubrovskii, and Thierry Baron. Composition-dependent interfacial abruptness in Au-catalyzed Si1-xGex/Si/Si1-xGex nanowire heterostructures.  Nano Letters, 2014, doi: 10.1021/nl5019707.

[8]   Lavenus P, Messanvi A, Rigutti L, Bugallo A De Luna, Zhang H, Bayle F, Julien F H, Eymery J, Durand C, Tchernycheva M. Experimental and theoretical analysis of transport properties of core/shell wire light emitting diodes probed by electron beam induced current microscopy. Nanotechnology 25, 255201 (2014). Doi: 10.1088/0957-4484/25/25/255201

[9]   M. Tchernycheva, P. Lavenus, H. Zhang, A. V. Babichev, G. Jacopin, M. Shahmohammadi, F. H. Julien, R. Ciechonski, G. Vescovi, and O. Kryliouk. InGaN/GaN Core−Shell Single Nanowire Light Emitting Diodes with Graphene-Based P‐Contact. Nano Letters 14, 2456 (2014). DOI: 10.1021/nl5001295

[10]    M. Tchernycheva, A. Messanvi, A. de Luna Bugallo, G. Jacopin, P. Lavenus, L. Rigutti, H. Zhang, Y. Halioua, F. H. Julien, J. Eymery, and C. Durand. Integrated Photonic Platform Based on InGaN/GaN Nanowire Emitters and Detectors. Nano Letters 14, 3515 (2014). DOI: 10.1021/nl501124s

[11]   C. Durand, P. Capiod, M. Berthe, T. Xu, J. P. Nys, R. Leturcq, P. Caroff, B. Grandidier. Electrical characterization of semiconductor nanowires by scanning tunneling microscopy. Proc. SPIE8996, Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling XI, 89960E (February 19, 2014). doi: 10.1117/12.2042767

[12]   S. Conesa-Boj, F. Boioli, E. Russo-Averchi, S. Dunand, M. Heiss, D. Rüffer, N. Wyrsch, C. Ballif, L. Miglio, A. Fontcuberta i Morral, Plastic and Elastic Strain Fields in GaAs/Si Core–Shell Nanowires. Nano Lett. 14, 1859 (2014). DOI: 10.1021/nl4046312

[13]   A. Dalmau Mallorqui, E. Alarcon-Lladó, E. Russo-Averchi, G. Tütüncüoglu, F. Matteini, D. Rüffer, A. Fontcuberta i Morral, Characterization and analysis of InAs/p-Si heterojunction nanowire-based solar cell.  J. Phys. D 47, 394017 (2014). doi: 10.1088/0022-3727/47/39/394017

[14]   D. Rüffer, M. Slot, R. Huber, T. Schwarze, F. Heimbach, G. Tütèuncuoglu, F. Matteini, E. Russo-Averchi, A. Kovacs, R. Dunin-Borkowski, R.R. Zamani,  J.R.  Morante, J. Arbiol, A. Fontcuberta i Morral, D. Grundler. Anisotropic magnetoresistance of individual CoFeB and Ni nanotubes with values of up to 1.4% at room temperature. APL Materials 2, 076112 (2014). doi: 10.1063/1.4891276

[15]   A. Casadei, E.F. Pecora, J. Trevino,C. Forestiere, D. Rüffer, E. Russo-Averchi, F. Matteini, G. Tutuncuoglu, M. Heiss, A. Fontcuberta i Morral, L. Dal Negro. Photonic-Plasmonic Coupling of GaAs Single Nanowires to Optical Nanoantennas. Nano Lett. 14, 2271 (2014). doi: 10.1021/nl404253x

[16]   C. Durand, P. Capiod, M. Berthe, J. P. Nys, C. Krzeminski, D. Stiévenard, C. Delerue, B. Grandidier. Nanoscale carrier multiplication mapping in a Si diode. Nano Lett. 14, 5636 (2014) doi: 10.1021/nl5022255

[17]   D. Tovee, P., Pumarol, M., C. Rosamond, M., Jones, R., C. Petty, M., A. Zeze, D., and V. Kolosov, O. Nanoscale resolution scanning thermal microscopy using carbon nanotube tipped thermal probes. Phys. Chem. Chem. Phys. 16, 1174. (2014). doi: 10.1039/C3CP53047G

[18]   Watson, S. M. D., Galindo, M. A., Horrocks, B. R., & Houlton, A. Mechanism of Formation of Supramolecular DNA-Templated Polymer Nanowires. Journal of the American Chemical Society, 2014, 136, 6649−6655. doi:10.1021/ja500439v. The work was also  highlighted in Science, Editor's Choice feature , 344, 558 (2014)

[19]   Watson, S. M. D., Pike, A. R., Pate, J., Houlton, A., & Horrocks, B. R. (2014). DNA-templated nanowires: morphology and electrical conductivity. Nanoscale, 6(8), 4027–37. DOI: 10.1039/C3NR06767J

[20]   J. Pate, F. Zamora, S. M. D. Watson, N. G. Wright, B. R. Horrocks, A. HoultonSolution-based DNA-templating of sub-10 nm conductive copper nanowires. J. Mater. Chem. C 2, 9265 (2014). DOI: 10.1039/C4TC01632G

[21]   M. Heiss, E Russo-Averchi, A Dalmau-Mallorquí, G Tütüncüoğlu, F Matteini, D Rüffer, S Conesa-Boj, O Demichel, E Alarcon-Lladó and A Fontcuberta i Morral. III-V nanowire arrays: growth and light interaction. Nanotechnology 25, 014015 (2014), invited paper for the 15th anniversary issue. doi: 10.1088/0957-4484/25/1/014015

[22]  V. G. Dubrovskii; Influence of the group V element on the chemical potential and crystal structure of Aucatalyzed III-V nanowires; Appl. Phys. Lett. 104, 053110 (2014). doi: 10.1063/1.4864276

[23]   V. G. Dubrovskii, N. V. Sibirev; Size distributions, scaling properties, and Bartelt-Evans singularities in irreversible growth with size-dependent capture coefficients; Phys Rev B 89, 054305 (2014). DOI:10.1103/PhysRevB.89.054305

[24]   N.V. Sibirev, M.V. Nazarenko, D.A. Zeze, V.G. Dubrovskii; Modeling the nucleation statistics in vapor–liquid–solid nanowires; J. Crystal Growth 401, 51 (2014). doi:10.1016/j.jcrysgro.2013.12.064

[25]   V.G. Dubrovskii and Yu.Yu. Hervieu. Diffusion-induced growth of nanowires: Generalized boundary conditions and self-consistent kinetic equation. J. Cryst. Growth 401, 431-440 (2014). DOI: 10.1016/j.jcrysgro.2014.01.015

[26]   N.V. Sibirev, V.G. Dubrovskii, A.V. Matetskiy, L.V. Bondarenko, D.V. Gruznev, A.V. Zotov, and  A.A. Saranin. Size distributions of fullerene surface clusters. Appl. Surf. Sci. 307, 46–51(2014). doi:10.1016/j.apsusc.2014.03.132

[27]   Williams, B. L.; Taylor, A. A.; Mendis, B. G.; Phillips, L; Bowen, L; Major, JD; Durose, K, Core-shell ITO/ZnO/CdS/CdTe nanowire solar cells. Appl. Phys. Lett. 104, 053907 (2014). doi: 10.1088/1742-6596/541/1/012089

[28]   H. D. Mohamed, S. M. D. Watson, B. R. Horrocks, A. Houlton. Chemical and electrochemical routes to DNA-templated rhodium nanowires. J. Mater. Chem. C 3, 438 (2015). DOI: 10.1039/c4tc02307b

[29]   M. Bouwes Bavinck, K. D. Jöns, M. Zielinski, G. Patriarche, J.-C. Harmand, N. Akopian, V. Zwiller. Photon cascade from a single crystal phase nanowire quantum dot. Nano Lett. 16, 1081 (2016). DOI: 10.1021/acs.nanolett.5b04217 

[30]   V. G. Dubrovskii. Fully analytical description for the composition of ternary vapor-liquid-solid nanowires. Cryst. Growth Des. 15, 5738 (2015).  DOI: 10.1021/acs.cgd.5b00924

[31]   V. G. Dubrovskii, N. V. Sibirev. Factors influencing the interfacial abruptness in axial III-V nanowire heterostructuresCryst. Growth Des.201616 (4), pp 2019–2023. DOI: 10.1021/acs.cgd.5b01613

[32]   J. Johansson, Z. Zanolli, and K. A. Dick, Polytype Attainability in III−V Semiconductor Nanowires, Cryst. Growth Des. 16 (2016) 371-379 DOI: 10.1021/acs.cgd.5b01339

[33]   T. Xu, B. Grandidier, Electrical characterization of semiconductor nanowires by scanning probe microscopies, Editor : J. Arbiol, Q. Xiong, Title of the book : Semiconductor nanowires: Materials, synthesis, characterization and applications, Woodhead Publishing. 2015 doi: 10.1016/B978-1-78242-253-2.00010-4

[34]   W.H. Chen, P. Pareige, C. Castro, T. Xu, B. Grandidier, D. Stiévenard, P. Roca I Cabarrocas. Atomic characterization of Au clusters in vapor-liquid-solid grown silicon nanowires, J. Appl. Phys. 118, 104301 (2015) doi: 10.1063/1.4930143

[35]   Maria Timofeeva, Alexey Bolshakov, Peter D. Tovee, Dagou A. Zeze, Vladimir G. Dubrovskii and Oleg V. Kolosov, Scanning thermal microscopy with heat conductive nanowire probes Ultramicroscopy. 01/2016; 162:42-51. DOI: 10.1016/j.ultramic.2015.12.006

[36]   F. Matteini, V.G Dubrovskii, G. Tutuncuoglu, D. Rüffer, Y. Fontana, A. Fontcuberta i Morral, Tailoring the diameter and density of self-catalyzed nanowires on silicon Nanotech. 26, 105603 (2015) doi: 10.1088/0957-4484/26/10/105603

[37]   S. Conesa-Boj, I. Hauge, M. Verheijen, S. Assali, A. Li, E.P.A.M. Bakkers, A. Fontcuberta i Morral Cracking the Si shell growth in hexagonal GaP-Si core-shell nanowires, Nano Lett 15, 2974 (2015) DOI: 10.1021/nl504813e

[38]   A. Dorodnyy, E. Alarcon-Llado, V.  Shklover, C. Hafner, A. Fontcuberta i Morral, J. Leuthold, Efficient multi-terminal spectrum splitting via a nanowire array solar cell ACS Photonics 2, 1284 (2015) DOI: 10.1021/acsphotonics.5b00222.

[39]   M. R. Ramdani, J. C. Harmand, F. Glas, G. Patriarche, L. Travers. Arsenic pathways in self-catalyzed growth of GaAs nanowires. Cryst. Growth Des. 13, 91 (2013). DOI: 10.1021/cg301167g

[40]   Y. Cohin, O. Mauguin, L. Largeau, G. Patriarche, F. Glas, E. Søndergård, J.-C. Harmand. Growth of vertical GaAs nanowires on amorphous substrate via a fiber-textured Si platform. Nano Lett. 13, 2743 (2013). DOI: 10.1021/nl400924c.

[41]   Y. Cohin, F. Glas, A. Cattoni, S. Bouchoule, O. Mauguin, L. Largeau, G. Patriarche, E. Søndergård, J.-C. Harmand. Crystallization of Si templates of controlled shape, size and orientation: toward micro- and nano-substrates. Cryst. Growth Des.. 15, 2102 (2015). DOI: 10.1021/cg5016548

[42]   V. Kumaresan, L. Largeau, F. Oehler, H. Zhang, O. Mauguin, F.  Glas, N. Gogneau, M. Tchernycheva, J.-C. Harmand. Self-induced growth of vertical GaN nanowires on silicaNanotechnologyVolume 27Number 13. doi: http://dx.doi.org/10.1088/0957-4484/27/13/135602

[43]   A A Koryakin, N V Sibirev, D A Zeze and V G Dubrovskii. Modeling of axial heterostructure formation in ternary III-V nanowires, Journal of Physics: Conference Series 643, 012007 (2015); doi:10.1088/1742-6596/643/1/012007.

[44]  M. K. Massey, A. Kotsialos, F. Qaiser, D. A. Zeze, C. Pearson, D. Volpati, L. Bowen, and M. C. Petty; Computing with carbon nanotubes: Optimization of threshold logic gates using disordered nanotube/polymer composites; Journal of Applied Physics 117, 134903 (2015); doi: 10.1063/1.4915343.

[45] Massey, M.K., A. Kotsialos, D. Volpati, E. Vissol-Gaudin, C. Pearson, L. Bowen, B. Obara, D.A. Zeze, C. Groves, and M.C. Petty, Evolution of Electronic Circuits using Carbon Nanotube Composites. Scientific Reports, 2016. 6: p. 7. doi: 10.1038/srep32197 

[46] Mukhin, I.S., I.V. Fadeev, M.V. Zhukov, V.G. Dubrovskii, and A.O. Golubok, Framed carbon nanostructures: Synthesis and applications in functional SPM tips. Ultramicroscopy, 2015. 148: p. 151-157. doi:

10.1016/j.ultramic.2014.10.008

[47] Frau, E., G. Tutuncuoglu, F. Matteini, H. Potts, R. Federiksen, K. Martinez, A.F.I. Morral, E. Alarcon-Llado, and Ieee, Understanding and exploiting optical properties in semiconductor nanowires for solar energy conversion. 2016 Ieee Photonics Society Summer Topical Meeting Series (Sum), 2016: p. 102-103. doi: 10.1109/PHOSST.2016.7548756

[48] Mallorqui, A.D., E. Alarcon-Llado, I.C. Mundet, A. Kiani, B. Demaurex, S. De Wolf, A. Menzel, M. Zacharias, and A.I. Morral, Field-effect passivation on silicon nanowire solar cells. Nano Research, 2015. 8(2): p. 673-681. doi: 10.1007/s12274-014-0551-7 

[49] Tutuncuoglu, G., M. Friedl, M. de la Mata, D. Deianae, J.B. Leran, H. Potts, F. Matteini, J. Arbiol, A.F.I. Morral, and Ieee, Quantum Heterostructures Based on GaAs Nanomembranes for Photonic Applications. 2016 Ieee Photonics Society Summer Topical Meeting Series (Sum), 2016: p. 128-129. doi: 10.1109/PHOSST.2016.7548759

[50] Babichev, A.V., H. Zhang, N. Guan, A.Y. Egorov, F.H. Julien, A. Messanvi, C. Durand, J. Eymery, and M. Tchernycheva, Optical properties of photodetectors based on single GaN nanowires with a transparent graphene contact. Semiconductors, 2016. 50(8): p. 1097-1101. doi: 10.1134/S106378261608008X

[51] Dai, X., A. Messanvi, H.Z. Zhang, C. Durand, J. Eymery, C. Bougerol, F.H. Julien, and M. Tchernycheva, Flexible Light-Emitting Diodes Based on Vertical Nitride Nanowires. Nano Letters, 2015. 15(10): p. 6958-6964. doi: 

10.1021/acs.nanolett.5b02900

[52] Egorov, A.Y., A.V. Babichev, L.Y. Karachinsky, Novikov, II, E.V. Nikitina, M. Tchernycheva, A.N. Sofronov, D.A. Firsov, L.E. Vorobjev, N.A. Pikhtin, and I.S. Tarasov, Lasing of multiperiod quantum-cascade lasers in the spectral range of (5.6-5.8)-mu m under current pumping. Semiconductors, 2015. 49(11): p. 1527-1530. doi: 10.1134/S106378261511007X

[53] Gogneau, N., N. Jamond, P. Chretien, F. Houze, E. Lefeuvre, and M. Tchernycheva, From single III-nitride nanowires to piezoelectric generators: New route for powering nomad electronics. Semiconductor Science and Technology, 2016. 31(10): p. 14. doi: 10.1088/0268-1242/31/10/103002 

[54] Guan, N., X. Dai, A. Messanvi, H.Z. Zhang, J.C. Yan, E. Gautier, C. Bougerol, F.H. Julien, C. Durand, J. Eymery, and M. Tchernycheva, Flexible White Light Emitting Diodes Based on Nitride Nanowires and Nanophosphors. Acs Photonics, 2016. 3(4): p. 597-603. doi: 10.1021/acsphotonics.5b00696

[55] Jamond, N., P. Chretien, F. Houze, L. Lu, L. Largeau, O. Maugain, L. Travers, J.C. Harmand, F. Glas, E. Lefeuvre, M. Tchernycheva, and N. Gogneau, Piezo-generator integrating a vertical array of GaN nanowires. Nanotechnology, 2016. 27(32): p. 9. doi: 10.1088/0957-4484/27/32/325403 

[56] Tchernycheva, M. and Ieee, Flexible nitride nanowire optoelectronic devices. 2016 Ieee Photonics Society Summer Topical Meeting Series (Sum), 2016: p. 148-149. doi: 10.1109/PHOSST.2016.7548760

[57] Zhang, H.Z., A. Messanvi, C. Durand, J. Eymery, P. Lavenus, A. Babichev, F.H. Julien, and M. Tchernycheva, InGaN/GaN core/shell nanowires for visible to ultraviolet range photodetection. Physica Status Solidi a-Applications and Materials Science, 2016. 213(4): p. 936-940. doi: 10.1002/pssa.201532573

[58] Gerardino, A., S. Birindelli, J.S. Wildmann, G. Pettinari, L. Businaro, A. Polimeni, M. Capizzi, S. Rubini, F. Martelli, A. Rastelli, R. Trotta, M. Felici, and Ieee, Single Photon Emitters in Dilute Nitrides: Towards a Determinist Approach of Quantum Dot-Photonic Crystal Nanocavity Coupling, in 2015 17th International Conference on Transparent Optical Networks. 2015, Ieee: New York. doi: 10.1109/ICTON.2015.7193631

[59] Mathey, L., T. Alphazan, M. Valla, L. Veyre, H. Fontaine, V. Enyedi, K. Yckache, M. Danielou, S. Kerdiles, J. Guerrero, J.P. Barnes, M. Veillerot, N. Chevalier, D. Mariolle, F. Bertin, C. Durand, M. Berthe, J. Dendooven, F. Martin, C. Thieuleux, B. Grandidier, and C. Coperet, Functionalization of Silica Nanoparticles and Native Silicon Oxide with Tailored Boron-Molecular Precursors for Efficient and Predictive p-Doping of Silicon. J. Phys. Chem. C, 2015, 119 (24), pp 13750–13757. DOI: 10.1021/acs.jpcc.5b03408

[60] Qian Gao, Vladimir G. Dubrovskii, Philippe Caroff, Jennifer Wong-Leung, Li Li, Yanan Guo, Lan Fu, Hark Hoe Tan, and Chennupati Jagadish. Simultaneous selective-area and vapor–liquid–solid growth of InP nanowire arrays. Nano Lett., 2016, v. 16, № 7, p. 4361–4367. doi: 10.1021/acs.nanolett.6b01461

[61] Valentina Zannier, Daniele Ercolani, Umesh Prasad Gomes, Jérémy David, Mauro Gemmi, Vladimir G. Dubrovskii, and Lucia Sorba. Catalyst composition tuning: the key for the growth of straight axial nanowire heterostructures with group III interchange. Nano Lett., 2016, v. 16, № 11, p. 7183-7190. doi: 10.1021/acs.nanolett.6b03524.

[62] J. Johansson, Stochastic analysis of nucleation rates, Phys. Rev. E 93 (2016) 022801. doi: 10.1103/PhysRevE.93.022801

[63] M. Schnedler, I. Lefebvre, T. Xu, V. Portz, G. Patriarche, J.-P. Nys, S. R. Plissard, P. Caroff M. Berthe, H. Eisele, R. E. Dunin- Borkowski, Ph. Ebert, and B. Grandidier. Lazarevicite-type short-range ordering in ternary III-V nanowires, Phys. Rev. B 94, 195306 (2016). doi:10.1103/PhysRevB.94.195306 

[64] Rigutti Lorenzo, Tchernycheva Maria, GaN nanowire-based UV photodetectors, in Wide Band Gap Semiconductor Nanowires for Optical Devices, Book chapter in The Particular Case of GaN and ZnO, Ed. by V. Consonni, G. Feuillet, p. 179, 22 pages, Wiley-ISTE (2014).

 

Conference papers and presentations with direct ESRs contribution *

[1]  G. Priante, J.-C. Harmand, G. Patriarche, F. Glas. Random stacking sequences in III-V nanowires are correlated. Poster presented at International Nano-Optoelectronics Workshop (iNOW 2014), Luga and Saint Petersburg (Russia), 10-22 August 2014.

[2]  G. Priante, J.-C. Harmand, G. Patriarche, F. Glas. Random stacking sequences in III-V nanowires are correlated. Oral communication at the 8th Nanowire Growth Workshop, Eindhoven (The Netherlands), 25-27 August 2014.

[3]  Y. Berdnikov, V. G. Dubrovskii. Statistics of homogeneously and heterogeneously nucleated atomic chains. Poster presented at International Nano-Optoelectronics Workshop (iNOW 2014), Luga and Saint Petersburg (Russia), 10-22 August 2014.

[4]  J. Grecenkov, V. G. Dubrovskii. Exchange interaction of carriers with magnetic ions in novel ZnMnSe/BeMnTe heterostructures with type-II band alignment. Poster presented at International Nano-Optoelectronics Workshop (iNOW 2014), Luga and Saint Petersburg (Russia), 10-22 August 2014.

[5]  Y. Berdnikov, A. Koryakin, N. Sibirev, V. G. Dubrovskii. Model for self-limited formation of catalytic nanoparticles. Poster presented at the 8th Nanowire Growth Workshop, Eindhoven (The Netherlands), 25-27 August 2014.

[6]  J. Grecenkov, V. G. Dubrovskii. Transition from zincblend to wurtzite structure in Au-catalyzed III-V nanowires: the role of group V element. Poster presented at the 8th Nanowire Growth Workshop, Eindhoven (The Netherlands), 25-27 August 2014.

[7]  L. Tian, L. Di Mario, F. Martelli. On the growth direction of Si nanowires grown by plasma-enhanced chemical vapour deposition. Poster presented at International Nano-Optoelectronics Workshop (iNOW 2014), Luga and Saint Petersburg (Russia), 10-22 August 2014.

[8]  L. Tian L. Di Mario, F. Martelli. On the growth direction of Si nanowires grown by plasma-enhanced chemical vapour deposition. Poster presented at the 8th Nanowire Growth Workshop, Eindhoven (The Netherlands), 25-27 August 2014.

[9]  J. Vukajlovic, E. Rusoo Averchi, A Dalmau Malloqrui, E. Alarcon Llado, A. Fontcuberta i Morral, Patterning substrates for NW growth using phase shift photolithography. Poster presentation at the CMI annual meeting, Lausanne May 2014.

[10]    J. Vukajlovic, E. Rusoo Averchi, A Dalmau Malloqrui, E. Alarcon Llado, A. Fontcuberta i Morral, Fabrication of silicon oxide nanotubes for nanowire growth using phase shift photolithography. Poster presentation at the MNE 2014, Lausanne (2014).

[11]    F. Matteini, J. Vukajlovic, E. Rusoo Averchi, A Dalmau Malloqrui, E. Alarcon Llado, G. Tutuncouglu, D. Ruffer, H. Potts, A. Fontcuberta i Morral,. Integration of GaAs nanowire on SI for photovoltaic application. Poster presentation at the Nano tera annual meeting, Lausanne May 2014.

[12]    J. Vukajlovic, A Dalmau Malloqrui, E. Alarcon Llado, F. Matteini, E.Russo Averchi, G. Tutuncouglu, D. Ruffer, H. Potts, A. Fontcuberta i Morral, Fabrication of silicon oxide nanotubes for nanowire growth using phase shift photolithography,  poster presentation at the MNE 2014, Lausanne (2014).

[13]    V. Neplokh, P. Lavenus, H. Zhang, A. Babichev, G. Jacopin, M. Shahmohammadi, F. H. Julien, L. Largeau, R. Ciechonski, G. Vescovi, O. Kryliouk, and M. Tchernycheva. Electron beam induced current microscopy and cathodoluminescence study of InGaN/GaN core-shell nanowire light emitting diodes.  The 23rd European Workshop on Heterostructure Technology – HETECH 2014, 12-15 October 2014 Justus Liebig University Giessen, Germany

[14]    H. Zhang, P. Lavenus, A. Babichev, V. Neplokh, G. Jacopin, M. Shahmohammadi, F. H. Julien, R. Ciechonski, G. Vescovi, O. Kryliouk, and M. TchernychevaInGaN/GaN core-shell single nanowire light emitting diodes with graphene-based p-contact.  International Workshop on Nitride Semiconductors IWN 2014, 24-29 August 2014 Wroclaw, Poland

[15]    A. Diaz, P. Capiod, M. Berthe, T. Xu, J.-P. Nys. Scanning tunneling microscopy of GaAs/GaAsSb nanowire. E-MRS, Lille, France, May 2014.

[16]    A. Diaz, M. Berthe, T. Xu, J.-P. Nys, B. Grandidier. Electrical characterization of different phases of silicene on Ag(111). iNOW 2014,  St Petersburg, Russia, August 2014.

[17]    C. Durand, A. Diaz, P. Capiod, M. Berthe, R. Leturcq, J.P. Nys, C. Delerue, D. Stiévenard, B. Grandidier. Novel experimental schemes to study the impact of excited electrons on devices and nanomaterials. iNOW 2014,  St Petersburg, Russia, August 2014.

[18]    A. Chandramohan, M. D. Cooke, B. Mendis, M. C. Petty, A. J. Gallant and D. A. Zeze. Low cost composite stamp for nanoimprint lithography. Marie Sklodowska-Cure Conference, ESOF, Copenhagen, Denamark, 20 June 2014

[19]    A. Chandramohan, M. D. Cooke, B. Mendis, M. C. Petty, A. J. Gallant and D. A. Zeze. Flexible nanopore stamp for soft lithography. International Nano-Optoelectronics Workshop (iNOW), Luga & St. Petersburg, Russia. 10-22 August 2014

[20]    A. Chandramohan, M. D. Cooke, B. Mendis, M. C. Petty, A. J. Gallant and D. A. Zeze. Low cost composite PDMS/h-PDMS stamps for nanoimprint lithography. Micro and Nano Engineering (MNE), Lausanne, Switzerland. 23 September 2014.

[21]    A. Chandramohan, N. Kaliteevskaya, M. D. Cooke, B. Mendis, M. C. Petty, A. J. Gallant and D. A. Zeze. Progress in self-assembly of 300nm polystyrene beads for nanosphere lithography. Micro and Nano Engineering (MNE), Lausanne, Switzerland. 25 September 2014.

[22]    A. Chandramohan, M. D. Cooke, N. Kaliteevskaya , B. Mendis, M. C. Petty, A. J. Gallant and D. A. Zeze. Low cost stamps for nanoimprint lithography.  Research Day, Durham University, United Kingdom. 02 October 2014.

[23]    A. Chandramohan, R. Sun, M. D. Cooke, J. Johansson, B. Mendis, M. C. Petty, A. J. Gallant and D. A. Zeze.  Self-assembled patterned stamp for soft lithography. Materials Research Society (MRS) Fall Meeting & Exhibit. Boston, Massachusetts, USA. 30 November – 5 December 2014.

[24]    A. Aldana, A. Houlton, B. R. Horrocks, DNA-Based Nanowires, Oral Presentation and Poster presented at International Nano-Optoelectronics Workshop (iNOW 2014), Luga and Saint Petersburg (Russia), 10-22 August 2014.

[25]    E. Alarcon-Llado, K. Yasaroglu, J. Vukajlovic, G. Tutuncuoglu, F. Matteini, D. Rueffer and A. Fontcuberta i Morral, Semiconductor Nanowires for Solar Water Splitting, poster presentation at Nanowires, Eindhoven, The Netherlands (2014).

[26]    G. Priante, J.-C. Harmand, G. Patriarche, F. Glas. Les séquences d’empilement des nanofils III-V sont corrélées. Oral presentation at the yearly meeting of Groupement de Recherche Nanofils semi-conducteurs, Toulouse (France), 29-31 October 2014.

[27]    G. Tiburzi, M.D. Cooke, B. Mendis, A.J.Gallant, D.A.Zeze, Integration of nanowires on AFM probe cantilevers, Marie Sklodowska-Cure Conference, ESOF, Copenhagen, Denmark, 20 June 2014

[28]    G. Tiburzi, M.D. Cooke, B. Mendis, A.J.Gallant, D.A.Zeze, Semiconducting nanowires for nanoscale mapping. International Nano-Optoelectronics Workshop (iNOW), St Petersburg, Russia, August 11–22, 2014.

[29]    G Papageorgiou, CdTe nanowire solar cells, 15-23 August 2014, International Nano Optoelectronics Workshop (iNOW), St Petersburg, Russia.

[30]    G. Priante, G. Patriarche, F. Oehler, F. Glas.  J.-C. Harmand. GaP/GaAs axial heterostructures in self-catalyzed nanowires. Oral communication at the International Meeting on Materials for Electronic Applications (IMMEA 2015), Marrakech, Morocco, 9-12 September 2015.

[31]    G. Priante, G. Patriarche, F. Oehler, F. Glas.  J.-C. Harmand. GaP/GaAs axial heterostructures in self-catalyzed nanowires. Oral communication at the 9th Nanowire Growth Workshop, Barcelona, Spain, 26-30 October 2015.

[32]    G. Priante, G. Patriarche, F. Oehler, F. Glas.  J.-C. Harmand. Axial heterostructures in self-catalyzed nanowires. Poster presented at the International summer school "Epitaxy updates and promises" of the Groupement de Recherche PULSE (Ultimate processes in semiconductor epitaxy), Porquerolles, France, 14-18 September 2015.

[33]    L. Tian. Growth of Si NWs on flexible organic substrates. Oral communication at the International Meeting on Materials for Electronic Applications (IMMEA 2015), Marrakech, Morocco, 9-12 September 2015.

[34]    L. Tian, L. Di Mario, A. Minotti, F. Martelli. Synthesis of Au- or In-seeded Si NWs on flexible organic substrates. Oral communication at the 9th Nanowire Growth Workshop, Barcelona, Spain, 26-30 October 2015.

[35]    L. Tian, Growth of Si nanowires by PECVD. Oral presentation at Università degli Studi di Roma “Tor Vergata”, Rome, Italy, 14 October 2015.

[36]    A. Aldana. DNA-based semiconductor nanowires. Oral communication at the International Meeting on Materials for Electronic Applications (IMMEA 2015), Marrakech, Morocco, 9-12 September 2015.

[37]    Adrian Diaz, P. Capiod, M. Berthe, T. Xu, J.-P. Nys, Scanning tunneling microscopy of GaAs/GaAsSb nanowire, E-MRS,  Lille, France, May 2014, Oral presentation.

[38]    Adrian Diaz, M. Berthe, T. Xu, J.-P. Nys, B. Grandidier Electrical characterization of different phases of silicene on Ag(111), iNOW 2014,  St Petersburg, Russia, August 2014, Poster.

[39]    A. Díaz, T. Xu, M. Berthe, J.-P. Nys, G. Tütüncuoglu, F. Matteini, H. Potts, A. Fontcberta i Morral, B. Grandidier. Scanning Tunneling microscopy of core-shell GaAs/LT-GaAs nanowires. E-MRS, Lille, France, May 2015, Oral presentation.

[40]    A. Díaz, T. Xu, M. Berthe, J.-P. Nys, G. Tütüncuoglu, F. Matteini, H. Potts, A. Fontcberta i Morral, B. Grandidier Scanning Tunneling microscopy of core-shell GaAs/LT-GaAs nanowires. MRS, Boston, France, December 2015, Oral presentation.

[41]    Chandramohan, A., Sibirev, N., Kaliteevskaya, N., Dubrovskii, V., Mendis, B., Petty, M., Gallant, A. & Zeze, A. (10 September 2015), Large-scale fabrication of stamps bearing size-tuneable nanostructures, International Meeting on Materials for Electronic Applications. Marrakech, Morocco.

[42]    Chandramohan, A., Sibirev, N., Dubrovskii, V.; Mendis, B., Petty, M., Gallant, A. & Zeze, D. (12 August 2015), Self-assembly based nanometer-scale patterning for nanowire growth, 9556: Nanoengineering: Fabrication, Properties, Optics, and Devices XII. San Diego, USA, 95560T. doi:10.1117/12.2188016

[43]    Sibirev, N., Chandramohan, A., Dubrovskii, V., Mendis, B., Petty, M., Gallant, A. & Zeze, D. (2015), Spatially ordered nanostructures using nanosphere lithography, Nanostructures: Physics and Technology. Saint Petersburg, Russia, Proceedings 23rd Int. Symp

[44]    G.  Priante, J.-C.  Harmand, G.  Patriarche, F.  Glas, Correlations in atomic plane stacking during III-V nanowire growth, MRS Fall meeting 2014 (Boston, USA, 30 November - 5 December 2014).

[45]     J.-C.  Harmand, G.  Priante, F.  Oehler,  K. Pantzas, G.  Patriarche, F.  Glas, Formation of AlxGa1-xAs/GaAs and GaPxAs1-x/GaAs heterostructures in self-catalyzed nanowires, MRS Spring meeting 2015 (San Francisco, USA, 6-10 April 2015).

[46]     F. Glas, G. Priante, G. Patriarche, J.-C. Harmand, Growth of insertions and quantum dots in nanowires, Journées Boîtes Quantiques 2015 (Grenoble, France 29-30 June 2015)

[47]     Tchernycheva, M., Xing Dai ; Messanvi, A. ; Hezhi Zhang ; Neplokh, V. ; Lavenus, P. ; Nan Guan ; Julien, F.H. ; Rigutti, L. ; Babichev, A. ; Eymery, J. ; Durand, C. Nitride nanowire light emitting diodes. Transparent Optical Networks (ICTON), 2015 17th International Conference on. 5-9 July 2015. Budapest. DOI 10.1109/ICTON.2015.7193550

[48]    DA Zeze, MK Massey, D Volpati, A Kotsialos, F  Qaiser, G Tirbuzi, C Pearson, MC Petty; Capability of Carbon Nanotubes Polymer Composites in Computation, Nano S&T-2015, Xi’an, China, September 2015.

[49] L. Tian, L. Di Mario, A. Minotti, G. Tiburzi, B. Mendis, F. Martelli. Synthesis of Au- or In-seeded Si NWs on flexible organic substrates. Oral presentation at MRS fall meeting 2015, Boston, USA, December 2015.

[50] G. Priante, F. Glas, G. Patriarche, K. Pantzas, F. Oehler, J.-C. Harmand. Formation d’hétérostructures axiales GaAs/AlGaAs dans les nanofils auto-catalysés. French workshop Nanofils semiconducteurs 2016, Bellevue, France, 20-22 juin 2016.

[51] L. Tian, L. di Mario, D. Catone, P. O’Keeffe, S. Turchini, F. Martelli. Ultrafast optical response in Au and Ag nanoparticles formed on silica nanowires arrays. Poster presented at the International summer school and workshop NSP 2016, Peterhof, Russia, 29/06 - 02/07/2016.

[52] A. Aldana, B. Horrocks, A. Houlton. DNA–based semiconductor nanowires. Poster presented at the International summer school and workshop NSP 2016,Peterhof, Russia, 29/06 - 02/07/2016.     

[53] G. Priante, F. Glas, G. Patriarche, K. Pantzas, F. Oehler, J.-C. Harmand. Formation of (Al,Ga)As axial heterostructures in self-catalyzed nanowires. Poster presented at the International summer school and workshop NSP 2016,Peterhof, Russia, 29/06 - 02/07/2016.      

[54] Y. Berdnikov, N. V. Sibirev and V.G. Dubrovskii. Modelling the irreversible growth of nanowires and 2D clusters. Proc. Int. Nano-Optoelectronic Workshop iNOW-2016, München and Würzburg, Germany, 26 July - 05 August 2016, p. 49-50.

[55] J. Grecenkov, V. G. Dubrovskii. Crystal phase control of MBE‐grown III‐V nanowires. Abstr. 19th International Conference on Molecular Beam Epitaxy, Montpelier, France, 4-9 September 2016, p. 53.

[56]V. G. Dubrovskii, N. V. Sibirev, Y. Berdnikov, U. P. Gomes, D. Ercolani, V. Zannier, L. Sorba. Broadening of Length Distributions of Au‐catalyzed InAs Nanowires. Abstr. 19th International Conference on Molecular Beam Epitaxy, Montpelier, France, 4-9 September 2016, p. 37 (oral).

[57] N. V. Sibirev, Yu. S. Berdnikov, V. G. Dubrovskii. Independence of nanowire length distribution of the initial conditions.  Abstr. 18th International Conference on Crystal Growth and Epitaxy, 7 -12 August 2016, Nagoya, Japan. Technical Digest,  p. 52.

[58] T. Xu, M. J. Wei, P. Capiod, A. Díaz Álvarez, X. L. Han, D. Troadec, J. P. Nys, M. Berthe, I. Lefebvre, G. Patriarche, S. R. Plissard, P. Caroff, Ph. Ebert, B. Grandidier. Determination of the band offset in semiconductor nanowire heterostructures. EMN meeting on nanowires, Amsterdam, The Netherlands, May 16-19, 2016, Invited talk.

[59] A. Díaz, G. Tütüncuoglu, T. Xu, M. Berthe, J.-P. Nys, S. Plissard, A. Fontcuerta i Morral, J.F. Lampin, B. Grandidier. Terahertz emission from low-temperature grown GaAs nanowires. Nanostructures for Photonics (NSP 2016), St Petersburg, Russia, June 28- July 02, 2016.

[60] E. Leshchenko, M.A. Turchina, V.G. Dubrovskii, T. Xu, A. Díaz, S. Plissard, P. Caroff, F. Glas, B. Grandidier, Narrowing of diameter distribution during growth of Ga-catalyzed GaAs nanowire, Nanostructures for Photonics (NSP 2016), St Petersburg, Russia, June 28- July 02, 2016.

[61] A. Díaz, G. Tütüncuoglu, M. Schnedler, I. Lefebvre, T. Xu, V. Portz, G. Patriarche, J.-P. Nys, S. R. Plissard, A. Fontcuberta i Morral, P. Caroff M. Berthe, H. Eisele, R. E. Dunin- Borkowski, Ph. Ebert, and B. Grandidier, Making defective shell in III-V core-shell nanowires: how and why? Nanostructures for Photonics (NSP 2016), St Petersburg, Russia, June 28- July 02, 2016, Invited talk.

[62] L. Di Mario,S. Turchini, S. Rubini, G. Zamborlini, V. Feyer, Lin Tian, C. M. Schneider, and F. Martelli, Study of the Schottky barrier on single GaAs nanowires by X-ray PhotoEmission Electron Microscopy, Nanowires workshop, Barcelona, Spain, October 2015.

[63] L. di Mario, S. Turchini, S. Rubini, G. Zamborlini, V. Feyer, Lin Tian, C. M. Schneider, and F. Martelli, Schottky barrier measurements on individual GaAs nanowires by nano XPS. MRS fall meeting, Boston, US, December 2015.

[64] Lin Tian, L. Di Mario, V. Zannier, D. Catone, S. Colonna, P. O’Keeffe, N. Zema, S. Rubini, and F. Martelli, Ultra-fast carrier dynamics and optical properties of ZnSe NWs grown on ITO-coated glass by MBE. Nanostructure for Photonics (NSP) 2016, June 28- July 02, St Petersburg, Russia.

[65] L. Di Mario, Lin Tian, D. Catone, P. O’Keeffe, S. Turchini and F. Martelli, Ultrafast optical response in Au and Ag nanoparticles formed on silica nanowires array. Nanostructure for Photonics (NSP) 2016, June 28- July 02, St Petersburg, Russia.

[66] L. Di Mario, Lin Tian, D. Catone, P. O’Keeffe, S. Turchini and F. Martelli, Ultrafast Carrier Dynamics in Au and Ag 3D Nanoparticles Arrays Formed on Silica Nanowires. MRS Fall meeting, Boston, US, November 2016.

[67] Lin Tian, L. Di Mario, V. Zannier, D. Catone, S. Colonna, P. O’Keeffe, N. Zema, S. Rubini, and F. Martelli, Ultra-fast Carrier Dynamics and Optical Properties of ZnSe Nanowires Grown by Molecular Beam Epitaxy. MRS Fall meeting, Boston, US, November 2016.

Other Conference papers by Consortium members

[1]  B Williams and K Durose, II-VI semiconductor solar cells – nanowires and extended defects, 15-23 August 2014  International Nano Optoelectronics Workshop (iNOW), St Petersburg, Russia (2014).

[2]   F. Glas, M. R. Ramdani, G. Patriarche, and J.-C. Harmand, Predictive modeling of self-catalyzed GaAs nanowire growth. Oral presentation at the 7th Nanowire Growth Workshop, Lausanne, Switzerland, June 2013.

[3]    F. Glas, The statistics of sub-Poissonian nucleation in nanowire growth, oral presentation at the 8th Nanowire Growth Workshop, Eindhoven, The Netherlands, August 2014.

[4]   D.A.  Zeze, M.C. Rosamond, P. Tovee, M.  Pumarol, O.V.  Kolosov, A.J.  Gallant, M.C. PettyRecording Nanoscale Thermal Transport in Materials Using Carbon SThM Nanoprobes. Paper: XX10.06 (oral; Symposium XX: Microelectromechanical Systems-Materials and Devices). MRS Fall Meeting & Exhibit, December 1-6 Boston, USA (2013).

[5]   M Nazarenko, AJ Gallant, MC Petty, OV Kolosov, VG Dubrovskii, DA Zeze. Scanning Thermal Microscopy: Sample-Nanotube Probe Interface Thermal Resistance Model.  Paper: SS19.28 (poster; Symposium SS: Nanowires and Nanotubes Novel Materials, Advanced Heterostructures, Doping and Devices). MRS Fall Meeting & Exhibit, December 1-6 Boston, USA (2013).

[6]   D.A. Zeze, R. Stone, M.K. Massey, D. Volpati, F. Qaiser, A. Kostialos, O. Kolosov, P. Tovee, M.C. PettyIntegration of carbon nanotubes. International Nano-Optoelectronics Workshop, St Petersburg, Russia, August 11–22, 2014.

[7]  A. Houlton, DNA a molecule for Nanomaterials engineering, EPSRC Workshop for Molecular-Scale Engineering, Buxton, September 2014.

[8]  A. Houlton DNA - A Biomolecule For Nanomaterials Synthesis. Scottish Dalton Meeting, St Andrews, UK, March 19, 2014.

[9]  B. R. Horrocks, Networks of DNA-templated palladium nanowires: structural and electrical characterisation and their use as hydrogen gas sensors, Faraday Discussion 164: Electroanalysis at the Nanoscale, University of Durham, UK, 1 - 3 July 2013.

[10]  J. Johansson, Polytypism in III-V nanowires and its implication for optical properties (invited), International Nano-Optoelectronics Workshop, St Petersburg, Russia, August 11-22, 2014

[11]  J. Johansson, Understanding poytypism in III-V nanowires (invited), MRS Spring Meeting, San Francisco, USA, April 6-10, 2015

[12]  J. Johansson, Nucleation approach to polytypism in III-V nanowires (keynote), 5th European Conference on Crystal Growth (ECCG5), Bologna, Italy, September 9-11, 2015

[13]  T. Xu, J.P. Nys, D. Stiévenard, B. Grandidier Synthesis and characterization of semiconductor nanowires. Journées Nanosciences et Nanotechnologies  J2N0 2013, Rennes, France, November 2013, Invited talk.

[14]   C. Durand, P. Capiod, M. Berthe, T. Xu, J.-P. Nys, R. Leturcq, Ph. Caroff, B. Grandidier Electrical characterization of semiconductor nanowires by scanning tunneling microscopy, SPIE Photonics West, San Francisco, USA, February 2014, Invited talk.

[15]   B Williams and K Durose, Nanowires for advanced PV, May 2013. E-MRS Strasbourg. Invited Talk

[16]   B Williams and K Durose, II-VI semiconductor solar cells – nanowires and extended defects, 15-23 August 2014  International Nano Optoelectronics Workshop (iNOW), St Petersburg, Russia. Invited Talk

[17]  F. Glas, J.-C. Harmand, V. Dubrovskii. Joint modelling of the kinetics and statistics of self-catalyzed nanowire growth. 9th Nanowire Growth Workshop and Nanowires conference (Barcelona, Spain, 26-30 October 2015).

[18]  F. Glas, J. C. Harmand, G. Patriarche, Nanoscale effects in nanowire formation, 2014 International Nano-Optoelectronics Workshop (iNOW 2014) (Luga and Saint-Petersburg, Russia, 10-22 August 2014).

[19]  F. Glas, J. C. Harmand, Joint modelling of the kinetics and statistics of self-catalyzed nanowire growth, International Meeting on Materials for Electronic Applications (IMMEA 2015) (Marrakech, Morocco, 9-12 September 2015).

[20]   DA Zeze, MK Massey, D Volpati, A Kotsialos, F Qaiser, C Pearson, C Groves and MC Petty; Computational Carbon Nanotubes Composites, AMME 2015- 22nd International Scientific Conference on Achievements in Mechanical and Materials Engineering, 6 - 9 December 2015, Gliwice - Zakopane, Poland.

[21]  DA Zeze, Nanostructured Materials and Devices. International Meeting on Materials for Electronic Applications IMMEA-2015, Marrakech – Morocco, 09 –12 September 2015.

[22]  DA Zeze, MK Massey, D Volpati, A Kotsialos, F Qaiser, C Pearson, C Groves and MC Petty; Using Carbon Nanotubes Composites as Computational Materials, ANM 2015: International conference on Advanced Materials- Nanotechnology conference 2015, Aveiro, Portugal, 20-22 July 2015.

[23]   DA Zeze, Advanced Functional Materials, 5th Chemical Nanoscience Symposium Newcastle CNSN-5; 26 March 2015, Newcastle, UK.

[24]V. G. Dubrovskii. Controlling the size distribution of optoelectronic III-V nanostructures and nanowires. Proc. Int. Nano-Optoelectronic Workshop iNOW-2016, München and Würzburg, Germany, 26 July - 05 August 2016, p. 32-33 (invited).

[25] N. V. Sibirev, A. A. Koriakin, V. G. Dubrovskii. Modeling of axial arsenide nanowire heterostructure formation. Abstr. 19th International Conference on Molecular Beam Epitaxy, Montpelier, France, 4-9 September 2016, p. 23.

[26] J. Johansson, Stochastic analysis of nucleation rates, The 7th Nordic Workshop on Statistical Physics: Biological, Complex and Non-Equilibrium Systems, Nordita, Stockholm, Sweden, March 16-18, 2016 (invited).

[27] J Johansson, Thermodynamics of VLS growth, International summer school and workshop Nanostructures for Photonics (NSP2016), St Petersburg, Russia, June 27-July 2, 2016

[28] J Johansson, Modeling polytypism in nanowires using the axial next nearest neighbor Ising model. Viscous liquids and the glass transition (XIV), Søminestationen, Holbæk, Denmark, June 16-18, 2016

[29] B. Grandidier, Novel experimental schemes to study the impact of excited electrons on devices and nanomaterials. Euromat, Warsaw, Poland, September 20-24, 2015, Invited talk.